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- Title
New method for the preparation of S doped Fe samples characterized by AES and TOF-SIMS depth profiling.
- Authors
Barnard, P. E.; Terblans, J. J.; Swart, H. C.
- Abstract
A new method for the preparation of sulfur (S) doped iron (Fe) samples is presented. The required amount of S in Fe is obtained by allowing the vaporized form of S to diffuse into a Fe sample (10mm diameter, 0.5mm thick) kept at a temperature of 750 K. Depth profile analysis using Auger Electron Spectroscopy and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) showed that the method is reproducible and can be used for the preparation of samples with different S concentrations. It was also found that S deposited onto Fe forms the desired FeS phase, which will prevent S from evaporating when the sample is annealed. Prepared samples were annealed to obtain homogeneity of S in Fe, after which the amount of S in the respective samples was determined by quantitative TOF-SIMS. The outcome of the results suggests the application of this method to other high melting point host and low melting point dopant systems.
- Subjects
IRON sulfides; DOPING agents (Chemistry); AUGER electron spectroscopy; DEPTH profiling; TIME-of-flight mass spectrometry; MELTING points
- Publication
Surface & Interface Analysis: SIA, 2014, Vol 46, Issue 10/11, p1064
- ISSN
0142-2421
- Publication type
Article
- DOI
10.1002/sia.5448