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- Title
Junctionless Tunnel Field Effect Transistor with Nonuniform Doping.
- Authors
Goswami, Yogesh; Asthana, Pranav; Basak, Shibir; Ghosh, Bahniman
- Abstract
In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.
- Subjects
NONUNIFORM plasmas; FIELD-effect transistors; NON-uniform flows (Fluid dynamics); INDIUM aluminum arsenide; DOPING agents (Chemistry)
- Publication
International Journal of Nanoscience, 2015, Vol 14, Issue 3, p-1
- ISSN
0219-581X
- Publication type
Article
- DOI
10.1142/S0219581X14500252