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- Title
Study the Structural Properties of Porous Silicon and their Applications as Thermal Sensors.
- Authors
Abbas, Israa Akram; Kadhm, Ameera J.
- Abstract
The photo-electrochemical etching (PECE) method has been utilized to create pSi samples on n-type silicon wafers (Si). Using the etching time 12 and 22 min while maintaining the other parameters 10 mA/cm² current density and HF acid at 75% concentration.. The capacitance and resistance variation were studied as the temperature increased and decreased for prepared samples at frequencies 10 and 20 kHz. Using scanning electron microscopy (SEM), the bore width, depth, and porosity % were validated. The formation of porous silicon was confirmed by x-ray diffraction (XRD) patterns, the crystal size was decreased, and photoluminescence (PL) spectra revealed that the emission peaks were centered at 2θ of 28.5619° and 28.7644° for etching time 12 and 22 min, respectively. Studying the capacitance and resistivity during temperature increasing and decreasing for both itching times shows clearly that the prepared pSi as a thermal sensor is working better and in more selectivity for 20 min itching time.
- Subjects
PHOTOELECTROCHEMICAL etching; ITCHING; SCANNING electron microscopy; POROUS silicon; SILICON wafers; DETECTORS; X-ray diffraction; HYPEREUTECTIC alloys
- Publication
Baghdad Science Journal, 2024, Vol 21, Issue 3, p1086
- ISSN
2078-8665
- Publication type
Article
- DOI
10.21123/bsj.2023.4097