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- Title
Study of the Influence of the Annealing Temperature on the Properties of SiC-SiO<sub>2</sub> Thin Films.
- Authors
BOZETINE, I.; KACI, S.; KEFFOUS, A.; RAHMOUNE, R.; MENARI, H.; MANSERI, A.
- Abstract
Nanocomposite SiC-SiO2 thin films were successfully synthesized on silicon and glass substrates by a physical vapor deposition method. The aim of this study is to show the influence of annealing temperature on the properties of SiC-SiO2 thin films. The deposition was carried out by a co-sputtering RF magnetron at 13.56 MHz, using one target of SiO2 and 2 strands of polycrystalline 6H-SiC. The properties of SiC-SiO2 thin films were investigated using two different techniques: scanning electron microscopy and reflectance spectroscopy. The SiC-SiO2 composite thin films showed a considerable decrease in reflectance from 21.63% to 11.85% at varying annealing temperatures in the range 450-900 °C.
- Subjects
THIN films; ANNEALING of metals; PHYSICAL vapor deposition; SCANNING electron microscopy techniques; POLYCRYSTALLINE semiconductors; REFLECTANCE spectroscopy
- Publication
Acta Physica Polonica: A, 2020, Vol 137, p499
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.137.499