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- Title
Creation of helical Dirac fermions by interfacing two gapped systems of ordinary fermions.
- Authors
Wang, Z. F.; Yao, Meng-Yu; Ming, Wenmei; Miao, Lin; Zhu, Fengfeng; Liu, Canhua; Gao, C. L.; Qian, Dong; Jia, Jin-Feng; Liu, Feng
- Abstract
Topological insulators are a unique class of materials characterized by a Dirac cone state of helical Dirac fermions in the middle of a bulk gap. When the thickness of a three-dimensional topological insulator is reduced, however, the interaction between opposing surface states opens a gap that removes the helical Dirac cone, converting the material back to a normal system of ordinary fermions. Here we demonstrate, using density function theory calculations and experiments, that it is possible to create helical Dirac fermion state by interfacing two gapped films-a single bilayer Bi grown on a single quintuple layer Bi2Se3 or Bi2Te3. These extrinsic helical Dirac fermions emerge in predominantly Bi bilayer states, which are created by a giant Rashba effect with a coupling constant of ~4?eV·Å due to interfacial charge transfer. Our results suggest that this approach is a promising means to engineer topological insulator states on non-metallic surfaces.
- Publication
Nature Communications, 2013, Vol 4, Issue 1, p1384
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/ncomms2387