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- Title
Diamond as substrate for 3C-SiC growth: A TEM study.
- Authors
Lloret, F.; Piñero, J.; Araujo, D.; Villar, M. P.; Gheeraert, E.; Vo‐Ha, A.; Soulière, V.; Rebaud, M.; Carole, D.; Ferro, G.
- Abstract
Vapor-liquid-solid (V-L-S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully lattice relaxed SiC 3C-type crystalline structure. Defects as dislocations at the diamond/SiC interface and stacking faults, in the thick SiC layer are revealed by high resolution TEM and CTEM. From the invisibility criteria, using dark field observations, 〈110〉 type Burger vector are identified.
- Subjects
VAPOR-liquid separators; CRYSTALLINE lens; TRANSMISSION electron microscopy; DIFFRACTION gratings; EAMES stacking chair
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2014, Vol 211, Issue 10, p2302
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201431179