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- Title
The Effect of Annealing on the Electroluminescence of SiO[sub 2] Layers with Excess Silicon.
- Authors
Baraban, A. P.; Egorov, D. V.; Petrov, Yu. V.; Miloglyadova, L. V.
- Abstract
We have studied the effect of annealing on the electroluminescence (EL) spectrum of Si–SiO[sub 2] structures containing excess ion-implanted silicon in the oxide layer. The implantation of 150-keV silicon ions to doses in the range from 5 × 10[sup 16] to 3 × 10[sup 17]cm[sup –2] leads to the appearance of an intense emission band at 2.7 eV in the EL spectrum. The postimplantation annealing leads to a decrease in the intensity of this band and to the appearance of a new EL band at 1.6 eV assigned to radiative transitions in defect centers formed at the boundaries between silicon nanoclusters and silicon dioxide. © 2004 MAIK “Nauka / Interperiodica”.
- Subjects
SILICA; ANNEALING of crystals; ELECTROLUMINESCENCE; IONS; SILICON; OXIDATION
- Publication
Technical Physics Letters, 2004, Vol 30, Issue 2, p85
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1666947