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- Title
Efficiency enhancement of InGaN amber MQWs using nanopillar structures.
- Authors
Ou, Yiyu; Iida, Daisuke; Liu, Jin; Wu, Kaiyu; Ohkawa, Kazuhiro; Boisen, Anja; Petersen, Paul Michael; Ou, Haiyan
- Abstract
We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and timeresolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
- Subjects
OPTICAL properties of indium gallium nitride; QUANTUM wells; NANOSTRUCTURED materials
- Publication
Nanophotonics (21928606), 2018, Vol 7, Issue 1, p317
- ISSN
2192-8606
- Publication type
Article
- DOI
10.1515/nanoph-2017-0057