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- Title
Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence.
- Authors
Das, Samadrita; Lenka, Trupti Ranjan; Talukdar, Fazal Ahmed; Nguyen, Hieu Pham Trung; Crupi, Giovanni
- Abstract
In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-shaped AlGaN quantum barriers (QB) instead of conventional barriers. This novel structure has decreased the downward band bending at the interconnection between the consecutive quantum barriers and also flattened the electrostatic field. The parameters used during simulation are extracted from the referred experimental data of conventional UV LED. Using the Silvaco Atlas TCAD tool; version 8.18.1.R, we have compared and optimized the optical as well as electrical characteristics of three varying LED structures. Enhancements in electroluminescence at 275 nm (52.7%), optical output power (50.4%), and efficiency (61.3%) are recorded for an EBL-free AlGaN UV LED with heart-shaped Al composition in the barriers. These improvements are attributed to the minimized non-radiative recombination on the surfaces, due to the progressively increasing effective conduction band barrier height, which subsequently enhances the carrier confinement. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance optical power and produce highly efficient UV emitters.
- Subjects
LIGHT emitting diodes; LUMINESCENCE; CONDUCTION bands; SURFACE recombination; ELECTRONS; INDIUM gallium nitride; ELECTROSTATIC fields
- Publication
Micromachines, 2023, Vol 14, Issue 10, p1926
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi14101926