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- Title
Electrostatic potential and optoelectronic characteristics of Janus MoSSe/MX<sub>2</sub> (M = Mo, X = S, Se) vdW Heterostructures with strain engineering.
- Authors
Du, Gonghe; Yang, Qianwen; Hu, Xudong; Ma, Shuangxiong; Ren, Yani; Xu, Yonggang; Ren, Zhaoyu; Zhao, Qiyi; Li, Lu
- Abstract
The modulation of electrostatic potential and optoelectronic characteristics of Janus MoSSe/MX2 (M = Mo, X = S, Se) van der Waals (vdW) heterostructures with strain engineering were studied by first principles. Based on the effection of uniaxial strain, the electronic properties of heterostructures not only are induced to form direct band gap and indirect band gap and even semiconductor-metal transformation, but also lead to strong interface-built electric field and excellent optical adsorption properties in the range of IR-visible. This work reveals the photophysical properties of MoSSe/MX2 vdW heterostructures as well as shows their strong potential for applications in novel optoelectronic devices and photocatalysis.
- Subjects
ELECTRIC potential; HETEROSTRUCTURES; BAND gaps; OPTOELECTRONIC devices; ENGINEERING; CHALCOGENS
- Publication
Journal of Nonlinear Optical Physics & Materials, 2024, Vol 33, Issue 1, p1
- ISSN
0218-8635
- Publication type
Article
- DOI
10.1142/S0218863523400040