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Half-quantum mirror Hall effect.
- Published in:
- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-51215-x
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- Article
Optimizing the Microstructures of Inclined Deposition to Improve the Photoelectric Properties of ZnO Thin Films.
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- Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4869, doi. 10.1007/s11664-024-11220-8
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- Article
Structural and Electronic Properties of Indium-Doped n-type Cd-Se-Te Crystals.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3848, doi. 10.1007/s11664-024-11094-w
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Interplay Between Structural and Magnetic Properties and Positron Annihilation Studies for Mn-Zn Nano-Ferrites.
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- Journal of Electronic Materials, 2024, v. 53, n. 4, p. 1738, doi. 10.1007/s11664-023-10893-x
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- Article
The Dominant Effects of Hopping Conduction on the Seebeck Coefficient and the Hall Mobility in p-Type CuInTe<sub>2</sub> and CuGaTe<sub>2</sub>.
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- Journal of Electronic Materials, 2023, v. 52, n. 12, p. 8303, doi. 10.1007/s11664-023-10735-w
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- Article
Analyses of Electrical Transport Properties of p-Type Cu<sub>2</sub>GeSe<sub>3</sub> Taking into Account Hopping Conduction Mechanisms.
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- Journal of Electronic Materials, 2023, v. 52, n. 12, p. 8270, doi. 10.1007/s11664-023-10727-w
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- Article
Hopping Conductivity in p-Type CuIn<sub>3</sub>Te<sub>5</sub>: A Critical Revisit.
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- Journal of Electronic Materials, 2023, v. 52, n. 12, p. 7880, doi. 10.1007/s11664-023-10717-y
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- Article
Improving the Uniform Distribution of Nano-Ag in Al-Doped ZnO Film to Enhance Its Application in Soft Touch Sensing Electrodes.
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- Journal of Electronic Materials, 2023, v. 52, n. 12, p. 7907, doi. 10.1007/s11664-023-10704-3
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- Article
Effect of Gamma Radiation on the Physical and Photoelectrochemical Properties of CuSbS<sub>2</sub> Thin Films Prepared via Spin-Coating Technique.
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- Journal of Electronic Materials, 2023, v. 52, n. 10, p. 6749, doi. 10.1007/s11664-023-10627-z
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- Article
Influence of Highly Efficient Carbon Doping on Al<sub>x</sub>Ga<sub>1−x</sub>As Layers with Different Al Compositions (x) Grown by MOVPE.
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- Journal of Electronic Materials, 2023, v. 52, n. 9, p. 6042, doi. 10.1007/s11664-023-10520-9
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- Article
Improved GZO Thin Film Structures by Nitrogen-Mediated Crystallization Process to Apply to Touch Sensing.
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- Journal of Electronic Materials, 2023, v. 52, n. 9, p. 5911, doi. 10.1007/s11664-023-10521-8
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- Article
Amphoteric-Dopant Model Applied to Multiband Analysis of Electrical Transport Properties of n-Type Pd<sub>x</sub>Cu<sub>1−x</sub>FeS<sub>2</sub> Including an Impurity Band.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5594, doi. 10.1007/s11664-023-10511-w
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- Article
Tuning Thermoelectric Properties of Spin-Coated Cu<sub>2</sub>SnS<sub>3</sub> Thin Films by Annealing.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5396, doi. 10.1007/s11664-023-10424-8
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- Article
Hot Extruded Bulk Polycrystalline (Bi<sub>1-x</sub>Sb<sub>x</sub>)<sub>2</sub>(Te<sub>1-y</sub>Se<sub>y</sub>)<sub>3</sub> Alloys: Electron Transport and Lattice Thermal Conductivity.
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- Journal of Electronic Materials, 2023, v. 52, n. 1, p. 707, doi. 10.1007/s11664-022-10041-x
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- Article
Optical and Electrical Properties of In-doped ZnO Films via the Spray Pyrolysis Technique for Optoelectronics Device Applications.
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- Journal of Electronic Materials, 2022, v. 51, n. 12, p. 6894, doi. 10.1007/s11664-022-09918-8
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- Article
Conversion from p- to n-Type Conductivity in CuO Thin Films Through Zr Doping.
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- Journal of Electronic Materials, 2022, v. 51, n. 10, p. 5644, doi. 10.1007/s11664-022-09836-9
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- Article
Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures.
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- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4714, doi. 10.1007/s11664-022-09802-5
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- Article
Defects Characterization of HgCdTe and CdZnTe Compounds by Positron Annihilation Spectroscopy.
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- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4659, doi. 10.1007/s11664-022-09801-6
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- Article
Role of Deep Defects on the Transport Properties of Polycrystalline Thermoelectric Alloys and Composites.
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- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4816, doi. 10.1007/s11664-022-09748-8
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- Article
The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors.
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- Journal of Electronic Materials, 2022, v. 51, n. 4, p. 1813, doi. 10.1007/s11664-022-09453-6
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- Article
Complexing Agent-Dependent Properties of Chemically Deposited Tin Antimony Sulphide Thin Films for Use in Sustainable Energy Devices.
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- Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1148, doi. 10.1007/s11664-021-09376-8
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- Article
Characterization of the Electrical Properties of a Double Heterostructure GaN/AlGaN Epitaxial Layer with an AlGaN Interlayer.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2521, doi. 10.1007/s11664-020-08733-3
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- Article
Negative Hall Factor of Acceptor Impurity Hopping Conduction in p-Type 4H-SiC.
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- Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1247, doi. 10.1007/s11664-020-08639-0
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- Article
A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods.
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- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5104, doi. 10.1007/s11664-020-08073-2
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- Article
Mechanisms of Two-Stage Conductivity Relaxation in CdTe:Cl with Ultrasound.
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- Journal of Electronic Materials, 2020, v. 49, n. 8, p. 4524, doi. 10.1007/s11664-020-08179-7
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- Article
p-Type Nonpolar a-ZnO:N Thin Films on r-Sapphire Substrates Grown by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2020, v. 49, n. 8, p. 4474, doi. 10.1007/s11664-020-08034-9
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- Article
Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching.
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- Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3481, doi. 10.1007/s11664-020-07986-2
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- Article
Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors.
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- Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6084, doi. 10.1007/s11664-019-07253-z
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- Article
Analysis of activation energy and entropy generation in mixed convective peristaltic transport of Sutterby nanofluid.
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- Journal of Thermal Analysis & Calorimetry, 2021, v. 143, n. 3, p. 1867, doi. 10.1007/s10973-020-09969-1
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- Article
Comparative analysis between 36 nm and 47 nm alumina-water nanofluid flows in the presence of Hall effect.
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- Journal of Thermal Analysis & Calorimetry, 2019, v. 135, n. 2, p. 873, doi. 10.1007/s10973-018-7379-4
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- Article
Thermodynamic analysis of MHD Couette-Poiseuille flow of water-based nanofluids in a rotating channel with radiation and Hall effects.
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- Journal of Thermal Analysis & Calorimetry, 2018, v. 132, n. 3, p. 1899, doi. 10.1007/s10973-018-7066-5
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- Article
Finsler Spinoptics.
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- Communications in Mathematical Physics, 2008, v. 283, n. 3, p. 701, doi. 10.1007/s00220-008-0573-7
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- Article
Equality of the Bulk and Edge Hall Conductances in a Mobility Gap.
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- Communications in Mathematical Physics, 2005, v. 259, n. 1, p. 185, doi. 10.1007/s00220-005-1369-7
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- Article
Boundary Maps for C*-Crossed Products with with an Application to the Quantum Hall Effect.
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- Communications in Mathematical Physics, 2004, v. 249, n. 3, p. 611, doi. 10.1007/s00220-004-1122-7
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- Article
Study of a Watt Balance Layout with an Upper Measurement Limit of 10 Grams.
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- Measurement Techniques, 2022, v. 65, n. 2, p. 111, doi. 10.1007/s11018-022-02056-x
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- Article
Effects of Cu doping on the properties of NiO film fabricated using the sol–gel method based on the rapid pyrolysis process.
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- Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 8, p. 540, doi. 10.1049/mnl.2019.0241
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- Article
Flexible Hall sensor made of laser-scribed graphene.
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- NPJ Flexible Electronics, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41528-021-00100-4
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- Article
Interplay of filling fraction and coherence in symmetry broken graphene p-n junction.
- Published in:
- Communications Physics, 2020, v. 3, n. 1, p. N.PAG, doi. 10.1038/s42005-020-00434-x
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- Article
Spin-orbit coupling induced valley Hall effects in transition-metal dichalcogenides.
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- Communications Physics, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42005-019-0127-7
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- Article
EXACT SOLUTIONS OF NON-NEWTONIAN FLUID OF ROTATING MHD FLOWS THROUGH POROUS MEDIA WITH HALL EFFECT BY COMPLEX VARIABLE TECHNIQUE.
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- Gulf Journal of Mathematics, 2022, v. 12, n. 2, p. 66
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- Article
Ultrastable Zn<sub>3</sub>N<sub>2</sub> Thin Films via Integration of Amorphous GaN Protection Layers.
- Published in:
- Advanced Materials Interfaces, 2024, v. 11, n. 22, p. 1, doi. 10.1002/admi.202400214
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- Article
High-Frequency Hall Effect and Transverse Electric Galvanomagnetic Waves in Current-Biased 2D Electron Systems.
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- JETP Letters, 2024, v. 119, n. 10, p. 800, doi. 10.1134/S0021364024600563
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- Article
Transport Properties of the Magnetic Topological Insulators Family (MnBi<sub>2</sub>Te<sub>4</sub>)(Bi<sub>2</sub>Te<sub>3</sub>)<sub>m</sub> (m = 0, 1, ..., 6).
- Published in:
- JETP Letters, 2023, v. 118, n. 12, p. 905, doi. 10.1134/S0021364023603305
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- Article
Giant Planar Hall Effect in an Ultra-Pure Mercury Selenide Single Crystal Sample.
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- JETP Letters, 2023, v. 118, n. 7, p. 495, doi. 10.1134/S0021364023602658
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- Article
Wannier Diagrams for Semiconductor Artificial Graphene.
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- JETP Letters, 2022, v. 116, n. 9, p. 638, doi. 10.1134/S0021364022602020
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- Article
Energy Spectrum of the Valence Band in HgTe Quantum Wells on the Way from a Two- to Three-Dimensional Topological Insulator.
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- JETP Letters, 2023, v. 117, n. 12, p. 916, doi. 10.1134/S0021364023601240
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- Article
Weak Antilocalization Effect in an AlAs/AlGaAs Quantum Well.
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- JETP Letters, 2022, v. 115, n. 9, p. 548, doi. 10.1134/S0021364022100538
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- Article
Hall Effect in a Doped Mott Insulator: DMFT Approximation.
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- JETP Letters, 2022, v. 115, n. 7, p. 402, doi. 10.1134/S002136402220036X
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- Article
Hall Effect in the Antiferromagnetic State of Ho<sub>0.8</sub>Lu<sub>0.2</sub>B<sub>12</sub>.
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- JETP Letters, 2022, v. 115, n. 3, p. 130, doi. 10.1134/S0021364022030079
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- Article
Resonant Photoluminescence of a Two-Dimensional Electron System upon the Formation of a Bulk 1/3 State of the Fractional Hall Effect.
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- JETP Letters, 2020, v. 112, n. 8, p. 485, doi. 10.1134/S0021364020200096
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- Article