Found: 57
Select item for more details and to access through your institution.
Temperature Dependences of Electrical Properties of n-type PbSe Single-Crystalline Films Subjected to α-Particle Bombardment.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 641, doi. 10.1134/1.1188045
- By:
- Publication type:
- Article
Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption.
- Published in:
- Crystallography Reports, 2024, v. 69, n. 4, p. 620, doi. 10.1134/S1063774524601485
- By:
- Publication type:
- Article
Study of the nature and mechanism of the formation of paramagnetic species in nickel-based Brookhart-type catalytic systems.
- Published in:
- Kinetics & Catalysis, 2016, v. 57, n. 4, p. 523, doi. 10.1134/S0023158416040054
- By:
- Publication type:
- Article
The Spatial-Kinematic Structure of the Region of Massive Star Formation S255N on Various Scales.
- Published in:
- Astronomy Reports, 2018, v. 62, n. 5, p. 326, doi. 10.1134/S1063772918050074
- By:
- Publication type:
- Article
DEVELOPMENT OF THE INTERACTING AGENTS BEHAVIOR SCENARIO IN THE CYBER SECURITY SYSTEM.
- Published in:
- Eastern-European Journal of Enterprise Technologies, 2019, v. 101, n. 9, p. 46, doi. 10.15587/1729-4061.2019.181047
- By:
- Publication type:
- Article
DEVELOPMENT OF THE MODEL OF THE ANTAGONISTIC AGENTS BEHAVIOR UNDER A CYBER CONFLICT.
- Published in:
- Eastern-European Journal of Enterprise Technologies, 2019, v. 100, n. 9, p. 6, doi. 10.15587/1729-4061.2019.175978
- By:
- Publication type:
- Article
DEVELOPMENT OF THE LASER-FOUNDRY PROCESS FOR MANUFACTURE OF BIMETALS.
- Published in:
- 2018
- By:
- Publication type:
- Abstract
Optimisation in Boolean-valued networks.
- Published in:
- Discrete Mathematics & Applications, 2005, v. 15, n. 2, p. 195, doi. 10.1515/1569392053971479
- By:
- Publication type:
- Article
The impact of globalization on performance musicology: Challenges and opportunities for music education in the 21st Century.
- Published in:
- Amazonia Investiga, 2024, v. 13, n. 76, p. 323, doi. 10.34069/AI/2024.76.04.26
- By:
- Publication type:
- Article
HUMAN BODY CAD MODELING IN THE FORM OF A VARIABLE DENSITY OBJECT.
- Published in:
- Proceedings of Odessa Polytechnic University / Odes'kyi Politechnichnyi Universytet Pratsi, 2021, v. 63, n. 1, p. 106, doi. 10.15276/opu.1.63.2021.11
- By:
- Publication type:
- Article
METHOD FOR ASSESSING OF RELIABILITY CHARACTERISTICS IN DESIGNING OF FAILURERESISTANT REAL-TIME OPERATING SYSTEMS.
- Published in:
- Proceedings of Odessa Polytechnic University / Odes'kyi Politechnichnyi Universytet Pratsi, 2020, v. 61, n. 2, p. 108, doi. 10.15276/opu.2.61.2020.13
- By:
- Publication type:
- Article
DESIGN OF ENGINEERING OBJECTS USING THE INFORMATION MODEL.
- Published in:
- Proceedings of Odessa Polytechnic University / Odes'kyi Politechnichnyi Universytet Pratsi, 2019, v. 58, n. 2, p. 91, doi. 10.15276/opu.2.58.2019.10
- By:
- Publication type:
- Article
Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs.
- Published in:
- Semiconductors, 2024, v. 58, n. 3, p. 263, doi. 10.1134/S1063782624030138
- By:
- Publication type:
- Article
Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots.
- Published in:
- Semiconductors, 2024, v. 58, n. 3, p. 244, doi. 10.1134/S1063782624030102
- By:
- Publication type:
- Article
Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics.
- Published in:
- Semiconductors, 2024, v. 58, n. 2, p. 191, doi. 10.1134/S1063782624020179
- By:
- Publication type:
- Article
Selective Area Epitaxy of InP/GaInP<sub>2</sub>Quantum Dots from Metal-Organic Compounds.
- Published in:
- Semiconductors, 2024, v. 58, n. 2, p. 187, doi. 10.1134/S1063782624020167
- By:
- Publication type:
- Article
High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors.
- Published in:
- Semiconductors, 2023, v. 57, n. 5, p. 252, doi. 10.1134/S106378262307014X
- By:
- Publication type:
- Article
Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them.
- Published in:
- Semiconductors, 2020, v. 54, n. 10, p. 1267, doi. 10.1134/S1063782620100255
- By:
- Publication type:
- Article
Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters.
- Published in:
- Semiconductors, 2020, v. 54, n. 4, p. 476, doi. 10.1134/S1063782620040053
- By:
- Publication type:
- Article
Recombination in GaAs p-i-n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities.
- Published in:
- Semiconductors, 2018, v. 52, n. 10, p. 1244, doi. 10.1134/S1063782618100135
- By:
- Publication type:
- Article
In<sub>0.8</sub>Ga<sub>0.2</sub>As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties.
- Published in:
- Semiconductors, 2018, v. 52, n. 7, p. 870, doi. 10.1134/S1063782618070199
- By:
- Publication type:
- Article
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD.
- Published in:
- Semiconductors, 2017, v. 51, n. 1, p. 93, doi. 10.1134/S1063782617010201
- By:
- Publication type:
- Article
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates.
- Published in:
- Semiconductors, 2016, v. 50, n. 4, p. 517, doi. 10.1134/S1063782616040163
- By:
- Publication type:
- Article
Site-Controlled Growth of Single InP QDs.
- Published in:
- Semiconductors, 2015, v. 49, n. 8, p. 1095, doi. 10.1134/S1063782615080230
- By:
- Publication type:
- Article
Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of 'Multimodal' InAs QDs.
- Published in:
- Semiconductors, 2015, v. 49, n. 8, p. 1111, doi. 10.1134/S1063782615080175
- By:
- Publication type:
- Article
Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell.
- Published in:
- Semiconductors, 2014, v. 48, n. 5, p. 653, doi. 10.1134/S1063782614050133
- By:
- Publication type:
- Article
A mechanism of variation in the electrical properties of polycrystalline p-PbSe films as a result of irradiation with α particles.
- Published in:
- Semiconductors, 2006, v. 40, n. 2, p. 172, doi. 10.1134/S1063782606020114
- By:
- Publication type:
- Article
DEVELOPMENT OF THE SPACE-TIME STRUCTURE OF THE METHODOLOGY FOR MODELING THE BEHAVIOR OF ANTAGONISTIC AGENTS OF THE SECURITY SYSTEM.
- Published in:
- Eastern-European Journal of Enterprise Technologies, 2020, v. 108, n. 2, p. 30, doi. 10.15587/1729-4061.2020.218660
- By:
- Publication type:
- Article
Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate.
- Published in:
- Technical Physics, 2023, v. 68, n. 12, p. 663, doi. 10.1134/S1063784223080194
- By:
- Publication type:
- Article
RESETTLEMENT FEATURES OF POPULATION OF TERNOPIL OBLAST IN THE CONTEXT OF NEW ADMINISTRATIVE AND TERRITORIAL SYSTEM.
- Published in:
- Human Geography Journal, 2022, v. 32, p. 52, doi. 10.26565/2076-1333-2022-32-06
- By:
- Publication type:
- Article
Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy.
- Published in:
- Technical Physics Letters, 2023, v. 49, p. S163, doi. 10.1134/S1063785023900649
- By:
- Publication type:
- Article
Investigation of the Photoelectric Characteristics of GaAs Solar Cells with Different InGaAs Quantum Dot Array Positioning in the i-Region.
- Published in:
- Technical Physics Letters, 2023, v. 49, p. S125, doi. 10.1134/S1063785023900546
- By:
- Publication type:
- Article
A GalnP-Based Photo-Converter of Laser Radiation with an Efficiency of 46.7% at a Wavelength of 600 nm.
- Published in:
- Technical Physics Letters, 2023, v. 49, p. S78, doi. 10.1134/S106378502390042X
- By:
- Publication type:
- Article
High-Efficiency GaInP/GaAs Photoconverters of the 600 nm Laser Line.
- Published in:
- Technical Physics Letters, 2023, v. 49, p. S75, doi. 10.1134/S1063785023900418
- By:
- Publication type:
- Article
High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots.
- Published in:
- Technical Physics Letters, 2022, v. 48, n. 3, p. 161, doi. 10.1134/S1063785022040186
- By:
- Publication type:
- Article
Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD.
- Published in:
- Technical Physics Letters, 2021, v. 47, n. 10, p. 730, doi. 10.1134/S1063785021070270
- By:
- Publication type:
- Article
Increasing the Efficiency of 520- to 540-nm Laser Radiation Photovoltaic Converters Based on GaInP/GaAs Heterostructures.
- Published in:
- Technical Physics Letters, 2021, v. 47, n. 4, p. 290, doi. 10.1134/S106378502103024X
- By:
- Publication type:
- Article
High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 12, p. 1219, doi. 10.1134/S106378502012024X
- By:
- Publication type:
- Article
Electrical Contacts to InP-based Structures with a Zn-doped Subcontact Layer to p-InP.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 12, p. 1167, doi. 10.1134/S1063785020120056
- By:
- Publication type:
- Article
The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 6, p. 599, doi. 10.1134/S106378502006022X
- By:
- Publication type:
- Article
Methanol and other molecular tracers of outflows and dense gas in the molecular cloud G345.01+1.79.
- Published in:
- Astronomy Reports, 2006, v. 50, n. 12, p. 965, doi. 10.1134/S1063772906120031
- By:
- Publication type:
- Article
Shock Tracers in the Molecular Cloud G1.6–0.025.
- Published in:
- Astronomy Reports, 2002, v. 46, n. 12, p. 955, doi. 10.1134/1.1529254
- By:
- Publication type:
- Article
Properties of Al<sub>x</sub>Ga<sub>1−x</sub>As grown from a mixed Ga–Bi melt.
- Published in:
- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-51234-0
- By:
- Publication type:
- Article
STATISTICAL METHODS OF FEATURE ENGINEERING FOR THE PROBLEM OF FOREST STATE CLASSIFICATION USING SATELLITE DATA.
- Published in:
- System Research & Information Technologies / Sistemnì Doslìdžennâ ta Ìnformacìjnì Tehnologìï, 2024, n. 1, p. 86, doi. 10.20535/SRIT.2308-8893.2024.1.07
- By:
- Publication type:
- Article
Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology.
- Published in:
- Progress in Photovoltaics, 2016, v. 24, n. 9, p. 1261, doi. 10.1002/pip.2789
- By:
- Publication type:
- Article
The Formation of a Low-Carbon Steel/Ni-Cr-W Alloy Bimetallic Material via Liquid–Solid Compound Casting with a Laser Assisted Solid Surface.
- Published in:
- Machines, 2024, v. 12, n. 8, p. 522, doi. 10.3390/machines12080522
- By:
- Publication type:
- Article
LAND BORDER DELIMITATION OF REPUBLIC OF KAZAKHSTAN: PRACTICAL KNOWLEDGE OF BORDER POLICY FORMATION.
- Published in:
- European Science Review, 2018, n. 7/8, p. 202, doi. 10.29013/esr-18-7.8-202-204
- By:
- Publication type:
- Article
Methanol observation of IRAS 19312+1950: A possible new type of class I methanol maser.
- Published in:
- Publications of the Astronomical Society of Japan, 2015, v. 67, n. 5, p. 95-1, doi. 10.1093/pasj/psv064
- By:
- Publication type:
- Article
REGGEOMETRY OF DEEPLY VIRTUAL COMPTON SCATTERING AND EXCLUSIVE VECTOR MESON PRODUCTION AT HERA.
- Published in:
- Acta Physica Polonica B, 2013, v. 44, n. 6, p. 1333, doi. 10.5506/APhysPolB.44.1333
- By:
- Publication type:
- Article
VARIABILITY OF THE FATIGUE INDICATOR SENSITIVITY AS A WAY TO ITS MULTIPLE FUNCTIONALITIES.
- Published in:
- Problems of Friction & Wear, 2019, v. 82, n. 1, p. 21, doi. 10.18372/0370-2197.1(82).13482
- By:
- Publication type:
- Article