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- Title
A Novel Built-in Current Sensor for N-WELL SET Detection.
- Authors
Wang, H.-B.; Liu, R.; Chen, L.; Bi, J.-S.; Li, M.-L.; Li, Y.-Q.
- Abstract
This paper presents and evaluates a new built-in current sensor used to detect n-well single-event transients (SETs) induced by radiation strikes in integrated circuits (IC). A 28 nm bulk CMOS test chip containing the proposed sensor design was irradiated by two-photon absorption lasers. Both simulation and experimental data confirm the validity of the proposed design and demonstrate that it can be used for SET detection in advanced technology nodes. Simulation results also demonstrate that this structure has increased SET detection capability and the capability is more sensitive to voltage and temperature variations when compared to the reference design.
- Subjects
SINGLE event effects; DETECTORS; INTEGRATED circuits; COMPLEMENTARY metal oxide semiconductors; SIMULATION methods &; models; TEMPERATURE; ELECTRIC potential
- Publication
Journal of Electronic Testing, 2015, Vol 31, Issue 4, p395
- ISSN
0923-8174
- Publication type
Article
- DOI
10.1007/s10836-015-5538-0