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- Title
Application of Scanning Hall Probe Microscopy Technique at Room Temperature 300K.
- Authors
Hussein Ali Mohammed
- Abstract
Active areas of bismuth Hall Probe sensors in the range (0.1 - 1) μm have been fabricated on Si/SiO2 with GaAs substrates at thickness of bismuth from (40, 60 and 70) nm by Electron Beam Lithography (EBL) and lift-off process. Scanning Hall probe microscopy (SHPM) technique at room temperature (300) K used to study Hall voltage, characterization of the noise figures and minimum detectable fields. Results are presented for both 0.4μm sensor, which is found minimum detectable fields (Bmin) 1.1 G/ Hz0.5 with dc currents about 5μA. But minimum detectable fields for HP size 0.6 μm at dc currents 20μA is Bmin 0.6 G/H0.5. The performance of our Hall probe devices at 300K could be improved still further are discussed.
- Subjects
SILICA; GALLIUM arsenide; BISMUTH; ELECTRON beam lithography; MICROSCOPY
- Publication
Kirkuk University Journal for Scientific Studies, 2018, Vol 13, Issue 2, p166
- ISSN
1992-0849
- Publication type
Article
- DOI
10.32894/kujss.2018.145726