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- Title
Next-Generation Hybrid RF Front-End with MoS 2 -FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film Antennas.
- Authors
Crippa, Paolo; Biagetti, Giorgio; Minelli, Lorenzo; Turchetti, Claudio; Aldrigo, Martino; Dragoman, Mircea; Mencarelli, Davide; Pierantoni, Luca
- Abstract
One-dimensional (1D) and two-dimensional (2D) materials represent the emerging technologies for transistor electronics in view of their attractive electrical (high power gain, high cut-off frequency, low power dissipation) and mechanical properties. This work investigates the integration of carbon-nanotube-based field-effect transistors (CNT-FETs) and molybdenum disulphide (MoS2)-based FETs with standard CMOS technology for designing a simple analog system integrating a power switching circuit for the supply management of a 10 GHz transmitting/receiving (T/R) module that embeds a low-noise amplifier (LNA) and a high-power amplifier (HPA), both of which loaded by nanocrystalline graphene (NCG)-based patch antennas. Verilog-A models, tuned to the technology that will be used to manufacture the FETs, were implemented to perform electrical simulations of the MoS2 and CNT devices using a commercial integrated circuit software simulator. The obtained simulation results prove the potential of hybrid CNT-MoS2-FET circuits as building blocks for next-generation integrated circuits for radio frequency (RF) applications, such as radars or IoT systems.
- Subjects
ANALOG circuits; COMPLEMENTARY metal oxide semiconductors; ANTENNAS (Electronics); RADIO frequency integrated circuits; POWER supply circuits; FIELD-effect transistors; GRAPHENE
- Publication
Electronics (2079-9292), 2022, Vol 11, Issue 22, p3708
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics11223708