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- Title
Schottky barrier height modulation at metal/n-GaN interface by BCl<sub>3</sub>/Ar plasma treatment.
- Authors
Ito, Toshihide; Nunoue, Shinya
- Abstract
When n-GaN surface is treated by BCl3/Ar plasma, the Schottky barrier height (SBH) of Pt, Ni, or Ag/n-GaN is decreased, whereas that of Al/n-GaN is increased. The slope parameter is decreased by the BCl3/Ar plasma treatment, indicating that the Fermi-level pinning is strengthened and the SBH is modulated. From the secondary ion mass spectrometry and X-ray photoelectron spectroscopy measurements, it is assumed that the strong Fermi-level pinning is due to the interface states related to oxidized B.
- Subjects
FERMI level; SCHOTTKY barrier; X-ray photoelectron spectroscopy; OXIDIZING agents; SEMICONDUCTOR-metal boundaries
- Publication
Physica Status Solidi (B), 2015, Vol 252, Issue 5, p1011
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201451577