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- Title
Electrical characterization of liquid-phase-deposited Si ON on ( NH<sub>4</sub>)<sub>2</sub> S-treated Ga As.
- Authors
Yen, Chih‐Feng; Lee, Jung‐Chan; Cheng, Chi‐Hsuan; Lee, Ming‐Kwei
- Abstract
The electrical characteristics of liquid-phase-deposited (LPD) silicon oxynitride film on ammonium-sulfide-treated p-type (100) gallium arsenide (GaAs) substrate were investigated. Hydrofluosilicic acid, ammonia, and boric acid aqueous solutions were used as precursors. The electrical characteristics of silicon oxynitride film are a function of the boric acid volume in the growth solution and much improved on GaAs substrate with ammonium-sulfide treatment. The leakage currents can reach 1.24 × 10−7 and 7.85 × 10−7 A cm−2 at ±0.5 MV cm−1. The lowest interface state density and the dielectric constant are 3.32 × 1011 cm−2 eV−1 and 4.74, respectively.
- Subjects
SILICON oxynitride; THIN films; AMMONIUM compounds; GALLIUM arsenide; AMMONIA; BORIC acid
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2013, Vol 210, Issue 9, p1762
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201228592