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- Title
Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia.
- Authors
Oseki, Masaaki; Kobayashi, Atsushi; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi
- Abstract
We report on the epitaxial growth of semipolar InAlN (1...03) on yttria-stabilized zirconia (YSZ) by pulsed sputtering deposition (PSD). Unlike the direct growth of InAlN on YSZ that resulted in c-plane InAlN, the insertion of an InN buffer layer favored the growth of InAlN in the semipolar direction. Phase separation of semipolar InAlN taking place in the films with intermediate indium contents can be suppressed by low-temperature (less than 400°C) PSD growth. These semipolar InAlN films grown at low temperatures possessed sufficient optical quality to demonstrate photoluminescence at room temperature.
- Subjects
EPITAXY; YTTRIA stabilized zirconium oxide synthesis; BAND gaps; X-ray diffraction; SPUTTERING (Physics); ELECTROMAGNETIC waves; MATHEMATICAL models
- Publication
Physica Status Solidi (B), 2017, Vol 254, Issue 10, p1
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201700211