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- Title
Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure.
- Authors
Vainilovich, Aliaksei G.; Lutsenko, Evgenii V.; Pavlovskii, Viacheslav N.; Yablonskii, Gennadii P.; Alyamani, Ahmed; Aljohani, Maher; Aljariwi, Abdulaziz; Gronin, Sergey V.; Sorokin, Sergey V.; Sedova, Irina V.; Ivanov, Sergey V.
- Abstract
A high-efficiency microchip violet-green laser converter based on a molecular-beam epitaxy grown green-emitting (Zn)CdSe quantum dot (QD) II-VI laser heterostructure, optically pumped by emission of a cheap violet InGaN laser diode (LD) was demonstrated. The active region of the II-VI laser heterostructure consisted of three electronically coupled (Zn)CdSe QD sheets in a single ZnSe quantum well (QW) placed asymmetrically inside a graded-index ZnMgSSe/ZnSe superlattice optical waveguide. The cavity length of the cleaved-facet II-VI laser was 130 μm which is a nearly optimal value for minimizing the excitation power. InGaN LD radiation was focused into a narrow stripe on the surface of the II-VI laser by a microlens optical system. The converter showed laser emission at 541 nm with threshold excitation power of ∼0.5 W. The maximal output pulse power and conversion efficiency of 1.5 W and ∼15%, respectively, were achieved. The device was mounted in a standard TO-18 LD package. Photograph of the operating violet-green microchip laser converter.
- Subjects
CASCADE converters; INTEGRATED circuits; OPTICAL pumping; SEMICONDUCTOR lasers; QUANTUM dot devices; HETEROSTRUCTURES
- Publication
Physica Status Solidi (B), 2016, Vol 253, Issue 8, p1498
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201600070