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- Title
Enhanced Ferroelectric Property of P(VDF‐TrFE‐CTFE) Film Using Room‐Temperature Crystallization for High‐Performance Ferroelectric Device Applications.
- Authors
Cho, Yuljae; Ahn, Docheon; Park, Jong Bae; Pak, Sangyeon; Lee, Sanghyo; Jun, Byoung Ok; Hong, John; Lee, Su Yong; Jang, Jae Eun; Hong, Jinpyo; Morris, Stephen M.; Sohn, Jung Inn; Cha, Seung Nam; Kim, Jong Min
- Abstract
The article focuses on enhanced ferroelectric property of film using room-temperature crystallization for high-performance ferroelectric device applications and ferroelectric field effect transistors (feFET) and mechanical energy harvesting devices. It mentions use of conventional process of thermal annealing (TA), a room temperature annealing method and the phase is depicted by a different molecular structure. It also mentions films were measured and compared using X-Ray Diffraction (XRD).
- Subjects
FERROELECTRICITY; CRYSTALLIZATION; FERROELECTRIC devices; FIELD-effect transistors; MECHANICAL energy; MOLECULAR structure; X-ray diffraction
- Publication
Advanced Electronic Materials, 2016, Vol 2, Issue 10, p1
- ISSN
2199-160X
- Publication type
Article
- DOI
10.1002/aelm.201600225