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- Title
Formation of Cubic Silicon Carbide Layers on Silicon under the Action of Continuous and Pulsed Carbon Ion Beams.
- Authors
Bayazitov, R. M.; Khaibullin, I. B.; Batalov, R. I.; Nurutdinov, R. M.
- Abstract
The structure and infrared absorption of cubic silicon carbide (β-SiC) layers produced by the continuous high-dose implantation of carbon ions (C[SUP+]) into silicon (E = 40 keV and D = 5 × 10[SUP17] cm[SUP-2]), followed by the processing of the implanted layers with a high-power nanosecond pulsed ion beam (C[SUP+], τ = 50 ns, E = 300 keV, and W = 1.0-1.5 J/cm[SUP2]), are investigated. Transmission electron microscopy and electron diffraction data indicate the formation of a coarse-grained polycrystalline β-SiC layer with grain sizes of up to 100 nm. A characteristic feature of such a layer is the dendritic surface morphology, which is explained by crystallization from the melt supercooled well below the melting point of β-SiC.
- Subjects
SILICON carbide; CARBON; IONS; SILICON
- Publication
Technical Physics, 2003, Vol 48, Issue 6, p742
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/1.1583828