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- Title
Reply to Comment on "Chemical vapor deposition synthesis and Raman scattering investigation of quasi-one-dimensional ZrS<sub>3</sub> nanoflakes".
- Authors
Chen, Yang; Jin, Yuanyuan; Yang, Junqiang; Ren, Yizhang; Duan, Zhuojun; Liu, Xiao; Sun, Jian; Liu, Song; Zhu, Xukun; Duan, Xidong
- Abstract
This document is a reply to a comment on a research paper titled "Chemical vapor deposition synthesis and Raman scattering investigation of quasi-one-dimensional ZrS3 nanoflakes." The authors address the suggestions made in the comment, which include inconsistencies in the number of peaks observed in the original paper, the impact of sulfur vacancies on the semiconducting nature of ZrS3, and the wider Zr 3d peak compared to previous reports. The authors agree with the first point and provide revised XPS peak data. They also confirm the presence of sulfur vacancies and attribute the wider Zr 3d peak to the appearance of ZrS2 nanoflakes during synthesis. The revisions improve the quality of the paper and provide insights for photoelectric devices based on ZrS3.
- Subjects
CHEMICAL vapor deposition; FIELD-effect transistors; ENERGY levels (Quantum mechanics); CHEMICAL engineering; PHOTOELECTRON spectroscopy
- Publication
Nano Research, 2024, Vol 17, Issue 9, p8649
- ISSN
1998-0124
- Publication type
Article
- DOI
10.1007/s12274-024-6803-2