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- Title
Fabrication of large area hexagonal boron nitride thin films for bendable capacitors.
- Authors
Guo, Ning; Wei, Jinquan; Jia, Yi; Sun, Huanhuan; Wang, Yuhang; Zhao, Kehan; Shi, Xiaolan; Zhang, Liuwan; Li, Xinming; Cao, Anyuan; Zhu, Hongwei; Wang, Kunlin; Wu, Dehai
- Abstract
Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride (h-BN) can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of ∼9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 μF/cm, which is one order of magnitude higher than the calculated value. [Figure not available: see fulltext.]
- Publication
Nano Research, 2013, Vol 6, Issue 8, p602
- ISSN
1998-0124
- Publication type
Article
- DOI
10.1007/s12274-013-0336-4