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- Title
S-Bend Silicon-On-Insulator (SOI) Large Cross-Section Rib Waveguide for Directional Coupler.
- Authors
Zamhari, Nurdiani; Ehsan, Abang Annuar; Rahman, Mohd Syuhaimi Abd
- Abstract
S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 µm of waveguide spacing. It achieved 92.24% and 91.10% of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 µm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 µm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system.
- Subjects
SILICON-on-insulator technology testing; RIB waveguides; DIMENSIONAL analysis; WAVEGUIDE couplers; OPTICAL communications; COMPUTER software
- Publication
International Journal of Electrical & Computer Engineering (2088-8708), 2017, Vol 7, Issue 6, p3299
- ISSN
2088-8708
- Publication type
Article
- DOI
10.11591/ijece.v7i6.pp3299-3305