We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications.
- Authors
Kondratenko, T. T.; Grashchenko, A. S.; Osipov, A. V.; Redkov, A. V.; Ubyivovk, E. V.; Sharofidinov, Sh. Sh.; Kukushkin, S. A.
- Abstract
A technique is proposed for the formation of epitaxial films of silicon carbide, gallium nitride and aluminum nitride on the surfaces of non-planar silicon parts. Using this technique, a GaN/AlN/SiC/Si heterostructure was grown on the surface of a silicon ring. The samples were studied by scanning electron microscopy, as well as by Raman and energy-dispersive spectroscopy. It is shown that the preliminary deposition of a SiC layer on silicon by the atom-substitution method in which (111) facets are inevitably being formed regardless of the local crystallographic orientation of the substrate surface makes it possible to efficiently grow on silicon parts subsequent layers of III-nitrides of both the wurtzite and sphalerite types.
- Subjects
SILICON carbide; SILICON films; SILICON nitride films; ALUMINUM gallium nitride; GALLIUM nitride; SILICON carbide films; ALUMINUM nitride
- Publication
Technical Physics Letters, 2023, Vol 49, pS319
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785023010182