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- Title
Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate.
- Authors
Bessolov, V. N.; Konenkova, E. V.; Orlova, T. A.; Rodin, S. N.; Shcheglov, M. P.; Kibalov, D. S.; Smirnov, V. K.
- Abstract
We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101̅1̇) epilayers deviating by an angle of about 62° from the polar direction and having an X-ray rocking curve with a minimum FWHM value of ωθ ~ 60 arcmin.
- Subjects
NANOSILICON; GALLIUM nitride films; VAPOR phase epitaxial growth; POLARITY (Chemistry); MATERIALS science; X-ray diffraction measurement
- Publication
Technical Physics Letters, 2018, Vol 44, Issue 6, p525
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785018060172