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- Title
Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors.
- Authors
Zhukov, N. D.; Shishkin, M. I.; Rokakh, A. G.
- Abstract
Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15-25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1-2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50-70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.
- Subjects
SEMICONDUCTORS; BAND gaps; QUALITATIVE research; ELECTRON transitions; ELECTROPLATING; QUANTUM dots
- Publication
Technical Physics Letters, 2018, Vol 44, Issue 4, p362
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785018040284