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- Title
Adjusting the position of the optimum operating point of a power heterostructure field-effect transistor by forming a gate potential barrier based on a donor-acceptor structure.
- Authors
Lukashin, V.; Pashkovskii, A.; Lapin, V.; Shcherbakov, S.; Zhuravlev, K.; Toropov, A.; Kapralova, A.
- Abstract
The first results obtained in engineering research into power heterostructure field-effect transistors operating under zero gate bias are detailed. At a frequency of 10 GHz in pulse mode under gate voltages ranging from −0.2 to +0.2 V, transistors with L-shaped gates with a length of about 0.3 μm and a width of 0.8 mm exhibited a specific power in excess of 1.6 W/mm at a gain in excess of 11 dB and a power-added efficiency of more than 40%.
- Subjects
HETEROSTRUCTURES; FIELD-effect transistors; ELECTRIC potential; MAGNETIC fields; ACCELERATION (Mechanics)
- Publication
Technical Physics Letters, 2015, Vol 41, Issue 2, p142
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S106378501502008X