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- Title
Structural Characteristics of Multicomponent GaAs–In[sub x]Ga[sub 1 – ][sub x]As System from Double-Crystal X-ray Diffractometry Data.
- Authors
Afanas’ev, A. M.; Chuev, M. A.; Imamov, R. M.; Lomov, A. A.
- Abstract
The article continues a series of publications on the technologically important multilayer In[sub x]Ga[sub 1-x] As-GaAs/GaAs system with the 3-, 6-, and 9 nm-thick layers (quantum wells). The collimation system of the incident beam is improved. The dimensions of quantum wells and the interfaces between these wells are determined. The qualitative picture of quantum well "spreading" is described. The experimental diffraction reflection curves are measured from three different parts of the specimen. Their analysis shows how homogeneous the structure grown is.
- Subjects
MULTILAYERED thin films; SEMICONDUCTOR films; GALLIUM arsenide; INDIUM compounds
- Publication
Crystallography Reports, 2000, Vol 45, Issue 4, p655
- ISSN
1063-7745
- Publication type
Article