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- Title
A comparative study of SELBOX-JLT and SOI-JLT.
- Authors
Khan, Uzma; Ghosh, Bahniman; Akram, Md; Salimath, Akshaykumar
- Abstract
Analysis of thermal and electrical characteristics of the proposed device, selective buried oxide junctionless transistor (SELBOX-JLT) along with its analog performance, is compared with silicon on insulator junctionless transistor (SOI-JLT). The proposed device shows better thermal efficiency. The maximum device temperature of SELBOX-JLT is 311 K, much less than that of SOI-JLT (445 K). The proposed device has almost no effect of self-heating on output characteristics. SELBOX-JLT exhibits better I/ I ratio, subthreshold slope, and drain-induced barrier lowering as compared to SOI-JLT for the same channel length. The analog performance parameters as transconductance ( G), transconductance/drain current ratio ( G/ I), drain conductance ( G), output resistance ( R), intrinsic gain ( G R), and unity-gain frequency ( f) of the proposed device are found to be better than SOI-JLT.
- Subjects
TRANSISTORS; SILICON-on-insulator technology; ELECTRIC properties of semiconductors; THERMAL properties of semiconductors; HEAT treatment; TEMPERATURE effect; COMPARATIVE studies
- Publication
Applied Physics A: Materials Science & Processing, 2014, Vol 117, Issue 4, p2281
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-014-8661-3