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- Title
Robustness of a Topologically Protected Surface State in a Sb<sub>2</sub>Te<sub>2</sub>Se Single Crystal.
- Authors
Lee, Chao-Kuei; Cheng, Cheng-Maw; Weng, Shih-Chang; Chen, Wei-Chuan; Tsuei, Ku-Ding; Yu, Shih-Hsun; Chou, Mitch Ming-Chi; Chang, Ching-Wen; Tu, Li-Wei; Yang, Hung-Duen; Luo, Chih-Wei; Gospodinov, Marin M.
- Abstract
A topological insulator (TI) is a quantum material in a new class with attractive properties for physical and technological applications. Here we derive the electronic structure of highly crystalline Sb2Te2Se single crystals studied with angle-resolved photoemission spectra. The result of band mapping reveals that the Sb2Te2Se compound behaves as a p-type semiconductor and has an isolated Dirac cone of a topological surface state, which is highly favored for spintronic and thermoelectric devices because of the dissipation-less surface state and the decreased scattering from bulk bands. More importantly, the topological surface state and doping level in Sb2Te2Se are difficult to alter for a cleaved surface exposed to air; the robustness of the topological surface state defined in our data indicates that this Sb2Te2Se compound has a great potential for future atmospheric applications.
- Publication
Scientific Reports, 2016, p36538
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep36538