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- Title
Equivalent imperfect interface model of PN junction of piezoelectric semiconductor for the multi-field coupled waves propagation.
- Authors
Wei, Zibo; Wei, Peijun; Xu, Chunyu; Guo, Xiao
- Abstract
In this paper, an equivalent imperfect interface model of PN homojunction/ heterojunction of piezoelectric semiconductor for the multi-field coupled wave propagation is proposed firstly. PN junction is a special structure formed by the contact of two different types of doped semiconductors, which has been used extensively in semiconductor devices. Due to the gradient distribution of the electric potential and carrier concentration in PN junction of finite thickness, the reflection and the transmission will arise when the coupled waves propagate through PN junction. The effects of the PN junction on the wave propagation will be much more complicated by the accurate estimation. An equivalent imperfect interface model without thickness but with seven interface parameters is established to simulate the effects of PN junction which largely reduces the calculation cost. The numerical examples are provided and compared with the state transfer matrix method and the piecewise homogenization method. Energy flux of the reflected and transmitted waves are estimated, and the energy conservation is checked to verify reliability of the numerical results.
- Subjects
THEORY of wave motion; SEMICONDUCTOR junctions; DOPED semiconductors; SEMICONDUCTOR devices; FLUX (Energy); CARRIER density; PIEZOELECTRIC composites
- Publication
Acta Mechanica, 2024, Vol 235, Issue 1, p73
- ISSN
0001-5970
- Publication type
Article
- DOI
10.1007/s00707-023-03643-x