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- Title
High aspect ratio semiconducting nanostructure random networks: highly versatile materials for multiple applications.
- Authors
Ternon, Céline; Serre, Pauline; Rey, Germain; Holtzinger, Claire; Periwal, Priyanka; Martin, Mickaël; Baron, Thierry; Stambouli, Valérie; Langlet, Michel
- Abstract
In this work we demonstrate that, based on a simple and versatile fabrication method, the collective use and integration of high aspect ratio (AR) nanostructures, here Si and ZnO nanowires (NWs), is possible and addresses multiple application fields, including light detection, active materials for bio‐sensing devices, or materials with interesting wettability properties. A suitable implementation of the filtration method enables then to design networks composed of semiconducting NWs with AR in the range of 10–400. Even for the lowest AR, the network is coherent. However, good electrical properties and flexibility are obtained only for AR greater than 50. Si nanowire (SiNW) random networks observed by SEM: Large magnification showing the nanowires and low magnification showing the electrical test structure. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Part of Focus Issue on “Semiconductor Nanowires” (Eds.: Chennupati Jagadish, Lutz Geelhaar, Silvija Gradecak) In this Letter, 2D random networks composed of semiconducting nanowires (NW) are fabricated using a simple and versatile fabrication method. Considering the observed properties, including the electrical behaviour, the precise control over NW density in the network, the enhanced specific area, and the possibility to use any type of NWs, such 2D random networks are particularly well designed for integration into innovative light‐, bio‐ or gas‐sensing devices with an improved sensitivity.
- Subjects
NANOSTRUCTURED materials; NANOELECTROMECHANICAL systems; SILICON; ZINC oxide spectra; ELECTRIC properties of nanowires; OPTICAL radar
- Publication
Physica Status Solidi - Rapid Research Letters, 2013, Vol 7, Issue 10, p919
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.201308047