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- Title
Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar<sup>+</sup> Ion Beam.
- Authors
Mikoushkin, V. M.; Bryzgalov, V. V.; Makarevskaya, E. A.; Solonitsyna, A. P.; Marchenko, D.E.
- Abstract
Abstract: The elemental and chemical compositions throughout the thickness of the GaAs native oxide layer slightly irradiated by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy at different photon energies enabling variation of probing depth. The presence of only two phases was observed: of the gallium oxide Ga2O3 and elementary arsenic Aso generated due to complete decay of arsenic oxides under the ion irradiation. Depth composition profiles were determined nondestructively. Despite inhomogeneous depth distribution, these profiles demonstrated domination (90 at %) of the dielectric Ga2O3 phase virtually throughout all the oxide thickness (~2 nm).
- Subjects
GALLIUM arsenide; IRRADIATION; ARGON isotopes; ARSENIC oxides; PHOTOELECTRON spectroscopy
- Publication
Semiconductors, 2018, Vol 52, Issue 16, p2057
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618160194