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- Title
Kinetics of the thermal decomposition of tetramethylsilane behind the reflected shock waves between 1058 and 1194 K.
- Authors
PARANDAMAN, A; RAJAKUMAR, B
- Abstract
Thermal decomposition of tetramethylsilane (TMS) diluted in argon was studied behind the reflected shock waves in a single pulse shock tube (SPST) in the temperature range of 1058-1194 K. The major products formed in the decomposition are methane (CH ) and ethylene (C H); whereas ethane and propylene were detected in lower concentrations. The decomposition of TMS seems to be initiated via Si-C bond scission by forming methyl radicals (CH ) and trimethylsilyl radicals ((CH ) Si). The total rate coefficients obtained for the decomposition of TMS were fit to Arrhenius equation in two different temperature regions 1058-1130 K and 1130-1194 K. The temperature dependent rate coefficients obtained are k (1058-1130 K) = (4.61±0.70) ×10 exp (−(79.9 kcal mol ±3.5)/RT) s , k (1130-1194 K) = (1.33 ± 0.19) ×10 exp (−(15.3 kcal mol ±3.5)/RT) s . The rate coefficient for the formation of CH is obtained to be k (1058-1194 K) = (4.36 ± 1.23) ×10 exp (−(61.9 kcal mol ±4.9)/RT) s . A kinetic scheme containing 21 species and 38 elementary reactions was proposed and simulations were carried out to explain the formation of all the products in the decomposition of tetramethylsilane. [Figure not available: see fulltext.]
- Subjects
METHYLSILANE; CHEMICAL kinetics; SHOCK waves; CHEMICAL decomposition; TEMPERATURE effect; METHANE
- Publication
Journal of Chemical Sciences, 2016, Vol 128, Issue 4, p573
- ISSN
0974-3626
- Publication type
Article
- DOI
10.1007/s12039-016-1046-8