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- Title
Special regularities for lowering temperature during growth of high-quality CdTe semiconductor layers.
- Authors
Moskvin, P. P.; Rashkovetskyi, L. V.; Plyatsko, S. V.; Semenets, S. P.
- Abstract
To obtain epitaxial layers of A²B6 semiconductors with increased structural perfection from their own liquid phase, it has been proposed to use a technological process in which the synthesis temperature varies in such a manner that ensures a constant growth rate of layers during the whole process. The regularities of temperature variation with time for this process have been found on the basis of diffusion crystallization model. The developed model is realized by numerical methods and applied to description of the growth of cadmium telluride layers. Quantitative data on variations of synthesis temperature have been obtained, which can serve as a basis for choosing the temperature-time regimes of growth of cadmium telluride layers with a constant and required rate of solid phase formation.
- Subjects
SEMICONDUCTORS; EPITAXIAL layers; CADMIUM telluride; LIQUID phase epitaxy; TEMPERATURE
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, Vol 25, Issue 1, p036
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo25.01.036