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- Title
High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene (Adv. Funct. Mater. 12/2022).
- Authors
Melianas, Armantas; Kang, Min‐A; VahidMohammadi, Armin; Quill, Tyler James; Tian, Weiqian; Gogotsi, Yury; Salleo, Alberto; Hamedi, Mahiar Max
- Abstract
2D materials, analog resistive memories, electrochemical random-access memories, linear switching, mixed ionic-electronic conductors, molecular self-assembly, MXenes, neuromorphic computing High-Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene (Adv. Funct. Keywords: 2D materials; analog resistive memories; electrochemical random-access memories; linear switching; mixed ionic-electronic conductors; molecular self-assembly; MXenes; neuromorphic computing EN 2D materials analog resistive memories electrochemical random-access memories linear switching mixed ionic-electronic conductors molecular self-assembly MXenes neuromorphic computing 1 1 1 03/21/22 20220316 NES 220316 B Analog Resistive Memories b In article number 2109970, Armantas Melianas, Armin VahidMohammadi, Alberto Salleo, Mahiar Max Hamedi, and co-workers present the world's first electrochemical transistor memory based on 2D materials (MXene).
- Subjects
TITANIUM carbide; MEMORY; MOLECULAR self-assembly
- Publication
Advanced Functional Materials, 2022, Vol 32, Issue 12, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202270071