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- Title
Controllable synthesis of p-type CuS nanowires for self-driven NIR photodetector application.
- Authors
Wu, Chun-Yan; Pan, Zhi-Qiang; Liu, Zhu; Wang, You-Yi; Liang, Feng-Xia; Yu, Yong-Qiang; Wang, Li; Luo, Lin-Bao
- Abstract
Face-centered cubic CuS nanowires with length of up to 50 μm and diameters in the range of 100-500 nm are synthesized on Si substrates through the chemical vapor deposition method using a mixed gas of Ar and H as the carrier gas under a chamber pressure of about 700 Torr. It was found that the growth of quasi 1D nanostructure followed a typical vapor-liquid-solid (VLS) mechanism in which the element Cu was reduced by H as the catalyst. The as-synthesized CuS nanowires exhibited typical p-type semiconducting characteristics with a conductivity of about 600 S cm and a hole mobility ( μ ) of about 72 cm V s. Further study reveals that p-CuS nanowires/n-Si heterojunction exhibits distinct rectifying characteristics with a turn-on voltage of ~0.6 V and a rectification ratio of ~300 at ±1 V in the dark and a pronounced photovoltaic behavior with an open circuit voltage ( V ) of 0.09 V and a short circuit current ( I ) of 65 nA when illuminated by the NIR light (790 nm, 0.35 mW cm), giving rise to a responsivity ( R) about 0.8 mA W and specific detectivity ( D*) 6.7 × 10 cm Hz W at zero bias, which suggests the potential of as-synthesized CuS nanowires applied in the field of self-driven NIR photodetector.
- Subjects
P-type semiconductors; COPPER sulfide; NANOWIRES; NEAR infrared spectroscopy; PHOTODETECTORS; VAPOR-liquid equilibrium
- Publication
Journal of Nanoparticle Research, 2017, Vol 19, Issue 2, p1
- ISSN
1388-0764
- Publication type
Article
- DOI
10.1007/s11051-016-3736-z