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Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings.
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- Electronics (2079-9292), 2024, v. 13, n. 8, p. 1573, doi. 10.3390/electronics13081573
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- Article
An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications.
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- Electronics (2079-9292), 2024, v. 13, n. 5, p. 889, doi. 10.3390/electronics13050889
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- Article
An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications.
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- Electronics (2079-9292), 2024, v. 13, n. 2, p. 451, doi. 10.3390/electronics13020451
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- Article
The Optimization of Program Operation for Low Power Consumption in 3D Ferroelectric (Fe)-NAND Flash Memory.
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- Electronics (2079-9292), 2024, v. 13, n. 2, p. 316, doi. 10.3390/electronics13020316
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- Article
An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied.
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- Electronics (2079-9292), 2023, v. 12, n. 13, p. 2945, doi. 10.3390/electronics12132945
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- Article
Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory.
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- Electronics (2079-9292), 2022, v. 11, n. 17, p. 2738, doi. 10.3390/electronics11172738
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- Article
A Novel Structure to Improve the Erase Speed in 3D NAND Flash Memory to Which a Cell-On-Peri (COP) Structure and a Ferroelectric Memory Device Are Applied.
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- Electronics (2079-9292), 2022, v. 11, n. 13, p. N.PAG, doi. 10.3390/electronics11132038
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- Article
Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure.
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- Electronics (2079-9292), 2021, v. 10, n. 13, p. 1561, doi. 10.3390/electronics10131561
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- Article
TID Circuit Simulation in Nanowire FETs and Nanosheet FETs.
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- Electronics (2079-9292), 2021, v. 10, n. 8, p. 956, doi. 10.3390/electronics10080956
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- Article
The Analysis of SEU in Nanowire FETs and Nanosheet FETs.
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- Electronics (2079-9292), 2021, v. 10, n. 7, p. 863, doi. 10.3390/electronics10070863
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- Article
Retraction: Kang, S., et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9 , 1268.
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- Electronics (2079-9292), 2021, v. 10, n. 4, p. 408, doi. 10.3390/electronics10040408
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- Article
Ferroelectric Polarization Aided Low Voltage Operation of 3D NAND Flash Memories.
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- Electronics (2079-9292), 2021, v. 10, n. 1, p. 38, doi. 10.3390/electronics10010038
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- Article
A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations.
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- Electronics (2079-9292), 2021, v. 10, n. 1, p. 32, doi. 10.3390/electronics10010032
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- Article
A New Read Scheme for Alleviating Cell-to-Cell Interference in Scaled-Down 3D NAND Flash Memory.
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- Electronics (2079-9292), 2020, v. 9, n. 11, p. 1775, doi. 10.3390/electronics9111775
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- Article
Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications.
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- Electronics (2079-9292), 2020, v. 9, n. 8, p. 1268, doi. 10.3390/electronics9081268
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- Article
Investigation of Inhibited Channel Potential of 3D NAND Flash Memory According to Word-Line Location.
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- Electronics (2079-9292), 2020, v. 9, n. 2, p. 268, doi. 10.3390/electronics9020268
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- Article
Cost-Effective 4 GHz VCO Using Only Miniature Spirals Realized in a 0.18 μm CMOS Process for Wireless Sensor Network (WSN) Applications.
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- Electronics (2079-9292), 2019, v. 8, n. 11, p. 1369, doi. 10.3390/electronics8111369
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- Article
A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization.
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- Electronics (2079-9292), 2019, v. 8, n. 11, p. 1317, doi. 10.3390/electronics8111317
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- Article
Software-Based Adaptive Protection Control against Load Mismatch for a Mobile Power Amplifier Module.
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- Electronics (2079-9292), 2019, v. 8, n. 11, p. 1226, doi. 10.3390/electronics8111226
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- Article
A Radiation-Hardened Instrumentation Amplifier for Sensor Readout Integrated Circuits in Nuclear Fusion Applications.
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- Electronics (2079-9292), 2018, v. 7, n. 12, p. 429, doi. 10.3390/electronics7120429
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- Article
A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems.
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- Sensors (14248220), 2020, v. 20, n. 1, p. 171, doi. 10.3390/s20010171
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- Article
Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 21, p. 2859, doi. 10.3390/nano13212859
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- Article
SnO 2 -Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 18, p. 2603, doi. 10.3390/nano13182603
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- Article
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO 2 /Al 2 O 3 /HfO 2 Based Memristor on ITO Electrode.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 10, p. 2069, doi. 10.3390/nano10102069
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- Article
Mimicking biological synapses with a-HfSiO<sub>x</sub>-based memristor: implications for artificial intelligence and memory applications.
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- Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00380-8
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- Article
Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO X /TaN Memristors.
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- Materials (1996-1944), 2023, v. 16, n. 4, p. 1687, doi. 10.3390/ma16041687
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- Article
Forming-Free Tunable Analog Switching in WO x /TaO x Heterojunction for Emulating Electronic Synapses.
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- Materials (1996-1944), 2022, v. 15, n. 24, p. 8858, doi. 10.3390/ma15248858
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- Article
Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory.
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- Applied Sciences (2076-3417), 2023, v. 13, n. 6, p. 3388, doi. 10.3390/app13063388
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- Article
Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time.
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- Applied Sciences (2076-3417), 2023, v. 13, n. 5, p. 2909, doi. 10.3390/app13052909
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- Article
Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET.
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- Applied Sciences (2076-3417), 2021, v. 11, n. 3, p. 894, doi. 10.3390/app11030894
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- Article
Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 15, p. 3163, doi. 10.3390/app9153163
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- Article
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.
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- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03699-z
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- Article
Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.
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- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03696-2
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- Article
Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices.
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- Micromachines, 2024, v. 15, n. 4, p. 450, doi. 10.3390/mi15040450
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- Article