We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Effect of Doping on Noise Suppression of Ka Band DDR IMPATT.
- Authors
Banerjee, J.; Mitra, M.
- Abstract
Noise performance and output power generation of Ka-band DDR IMPATT diode has been investigated through the method of simulation. The iterative method has been used to study the effect of doping on the noise performance and power generation of this device. Effect of doping on noise parameters like noise measure, shot noise ratio and generated output power of compound semiconductor based IMPATTs (like InP, 3C SiC, 4H SiC, 6H SiC) are studied. It is interestingly found that output power can be increased and noise measure can be decreased by increasing doping concentration maintaining a proper doping level. It is obtained that 6H SiC produces minimum noise measure only 10.9072 dB at 300 Kelvin and 3C SiC has the capability of generation of maximum output power 248.6 miliwatt at Ka Band among these devices. 4H SiC shows maximum efficiency 26.3932% and maximum breakdown voltage (VB) 554.1919 volt at Ka Band. Results of the analysis presented in this paper will be useful to realize a comparative study of noise suppression technique of different semiconductor based IMPATTs at Ka band.
- Subjects
SEMICONDUCTOR doping; NOISE measurement; ITERATIVE methods (Mathematics); SEMICONDUCTOR research; NOISE control research
- Publication
International Journal of Microwave & Optical Technology, 2016, Vol 11, Issue 2, p107
- ISSN
1553-0396
- Publication type
Article