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- Title
Molecular Beam Epitaxy of (Al)GaAsN Using Ammonia as a Source of Nitrogen.
- Authors
Odnoblyudov, V. A.; Kovsh, A. R.; Zhukov, A. E.; Egorov, A. Yu.; Maleev, N. A.; Mikhrin, S. S.; Ustinov, V. M.
- Abstract
The possibility of using ammonia as a source of nitrogen for the molecular beam epitaxy (MBE) of AlGaAsN/GaAs layers was studied. It is shown that nitrogen is not incorporated into the GaAs layers in a broad range of the MBE conditions studied. The incorporation of nitrogen is possible in the presence of aluminum in the growing film. The molar fraction of nitrogen in the growing material is equal to that of aluminum, provided that the supply rate of ammonium is sufficiently high. Theoretical estimates are confirmed by the experimental data.
- Subjects
AMMONIA; MOLECULAR beam epitaxy; GALLIUM arsenide
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 6, p517
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1490977