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The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 75, doi. 10.1002/1521-3951(200011)222:1<75::AID-PSSB75>3.0.CO;2-0
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Negative Charge Carrier Transport in Poly(methylmethacrylate-co-9-anthracenyl-methylmethacrylate) Thin Films.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 179, doi. 10.1002/1521-3951(200011)222:1<179::AID-PSSB179>3.0.CO;2-A
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Latent Hardening of Germanium Crystals.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 41, doi. 10.1002/1521-3951(200011)222:1<41::AID-PSSB41>3.0.CO;2-U
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Defects Due to Metal Silicide Precipitation in Microelectronic Device Manufacturing: The Unlovely Face of Transition Metal Silicides.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 303, doi. 10.1002/1521-3951(200011)222:1<303::AID-PSSB303>3.0.CO;2-H
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Iridium-Related Deep Levels in n-Type Silicon.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 251, doi. 10.1002/1521-3951(200011)222:1<251::AID-PSSB251>3.0.CO;2-9
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Optical Beam Induced Current Investigations of Particle Detectors.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 245, doi. 10.1002/1521-3951(200011)222:1<245::AID-PSSB245>3.0.CO;2-Y
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Hardening by Thermal Vacancies in the B2 Region of the Fe-Al Phase Diagram.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 35, doi. 10.1002/1521-3951(200011)222:1<35::AID-PSSB35>3.0.CO;2-8
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Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion Barriers.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 261, doi. 10.1002/1521-3951(200011)222:1<261::AID-PSSB261>3.0.CO;2-5
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CEMS Study of the Interface Formation in the Fe-Si System during Pulsed Laser Deposition.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 279, doi. 10.1002/1521-3951(200011)222:1<279::AID-PSSB279>3.0.CO;2-6
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Mesoscopic Conductance Oscillations Associated with Dislocations in Semiconductors.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 151, doi. 10.1002/1521-3951(200011)222:1<151::AID-PSSB151>3.0.CO;2-D
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On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 219, doi. 10.1002/1521-3951(200011)222:1<219::AID-PSSB219>3.0.CO;2-U
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Atomistic Modeling of Misfit Dislocation Network Variants for Ge/Si(111) Interfaces.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 101, doi. 10.1002/1521-3951(200011)222:1<101::AID-PSSB101>3.0.CO;2-X
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About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 141, doi. 10.1002/1521-3951(200011)222:1<141::AID-PSSB141>3.0.CO;2-H
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Low Temperature, High Stress Plastic Deformation of Semiconductors: The Silicon Case.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 63, doi. 10.1002/1521-3951(200011)222:1<63::AID-PSSB63>3.0.CO;2-E
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Mixing and Silicide Formation during Xe-Ion Beam Irradiations of Ta/Si Bilayers.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 295, doi. 10.1002/1521-3951(200011)222:1<295::AID-PSSB295>3.0.CO;2-E
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HREM Image Analysis of III-V Heterostructures Based on Neural Networks.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 185, doi. 10.1002/1521-3951(200011)222:1<185::AID-PSSB185>3.0.CO;2-M
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Possible Polymerisation at Dislocations in C<sub>60</sub> Crystals.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 111, doi. 10.1002/1521-3951(200011)222:1<111::AID-PSSB111>3.0.CO;2-T
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Activation Energies of Plasticity and Lattice Properties of Cubic Crystal Systems.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 25, doi. 10.1002/1521-3951(200011)222:1<25::AID-PSSB25>3.0.CO;2-A
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Precipitates in Ribbon Grown Solar Silicon.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 353, doi. 10.1002/1521-3951(200011)222:1<353::AID-PSSB353>3.0.CO;2-Y
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Non-Planar Slip and Cross-Slip at the Onset of Plastic Deformation in Silicon.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 51, doi. 10.1002/1521-3951(200011)222:1<51::AID-PSSB51>3.0.CO;2-S
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Influence of Dislocations on I- V Characteristics of Schottky Diodes Prepared on n-Type 6H-SiC.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 159, doi. 10.1002/1521-3951(200011)222:1<159::AID-PSSB159>3.0.CO;2-I
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Oxygen-Related Defect Centers in Solar-Grade, Multicrystalline Silicon. A Reservoir of Lifetime Killers.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 379, doi. 10.1002/1521-3951(200011)222:1<379::AID-PSSB379>3.0.CO;2-2
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Strain Induced Electronic Alterations of Dislocation Mobility GeSi Layers.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 95, doi. 10.1002/1521-3951(200011)222:1<95::AID-PSSB95>3.0.CO;2-X
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Luminescence Studies on Plastic Stress Relaxation in ZnSe/GaAs(001).
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 169, doi. 10.1002/1521-3951(200011)222:1<169::AID-PSSB169>3.0.CO;2-E
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Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 133, doi. 10.1002/1521-3951(200011)222:1<133::AID-PSSB133>3.0.CO;2-D
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Two-Dimensional Mapping of pn Junctions by Electron Holography.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 213, doi. 10.1002/1521-3951(200011)222:1<213::AID-PSSB213>3.0.CO;2-H
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Improvements and Limits of the Open Circuit Voltage of mc-Silicon Solar Cells.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 389, doi. 10.1002/1521-3951(200011)222:1<389::AID-PSSB389>3.0.CO;2-Z
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Electron Energy-Loss Near-Edge Structure Studies of a Cu/(11-20)α-Al<sub>2</sub>O<sub>3</sub> Interface.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 199, doi. 10.1002/1521-3951(200011)222:1<199::AID-PSSB199>3.0.CO;2-2
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Extension of Hydrogen Passivation of Intragrain Defects and Grain Boundaries in Cast Multicrystalline Silicon.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 367, doi. 10.1002/1521-3951(200011)222:1<367::AID-PSSB367>3.0.CO;2-E
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Phosphorus Diffusion Gettering of Platinum in Silicon: Formation of Near-Surface Precipitates.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 327, doi. 10.1002/1521-3951(200011)222:1<327::AID-PSSB327>3.0.CO;2-U
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Investigation of Current Losses in Crystalline Silicon Solar Cells by a New Topographical Magnetic Field Technique (CASQ).
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 337, doi. 10.1002/1521-3951(200011)222:1<337::AID-PSSB337>3.0.CO;2-Q
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Special Defects in Quasicrystals.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 121, doi. 10.1002/1521-3951(200011)222:1<121::AID-PSSB121>3.0.CO;2-P
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Impact of Research on Defects in Silicon on the Microelectronic Industry.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 5, doi. 10.1002/1521-3951(200011)222:1<5::AID-PSSB5>3.0.CO;2-L
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Gettering of Diffused Au and of Cu and Ni Contamination in Silicon by Cavities Induced by High Energy He Implantation.
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- Physica Status Solidi (B), 2000, v. 222, n. 1, p. 319, doi. 10.1002/1521-3951(200011)222:1<319::AID-PSSB319>3.0.CO;2-Q
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