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- Title
NH<sub>4</sub>PF<sub>6</sub> assisted buried interface defect passivation for planar perovskite solar cells with efficiency exceeding 21%.
- Authors
Ding, Xing-Dong; Zhou, Xiao-Wen; Meng, Jin-Wei; Wang, Hao-Xin; Wu, Tai; Hua, Yong; Chen, Cheng; Cheng, Ming
- Abstract
The buried interface defects severely affect the further enhancements of efficiency and stability of SnO2-based planar perovskite solar cells (PSCs). To well tackle this problem, we propose a passivation strategy employing NH4PF6 to modify the buried interface of perovskite layer ((FAPbI3)0.85(MAPbBr3)0.15 composition) in planar PSCs. After introducing NH4PF6, the oxygen defects on the surface of SnO2 film are greatly restricted due to the coordinate interaction between fluorine atoms (F) in PF6− and undercoordinated Sn4+. Meanwhile, the hydrogen bonding interaction (N–H⋯I) between NH4PF6 and PbI2 can passivate the non-radiative charge recombination sites, significantly optimizing the quality of perovskite film, as well as the charge transfer process at the SnO2/perovskite interface. As a result, the NH4PF6-modified PSC obtains a champion power conversion efficiency (PCE) of 21.11% superior to the reference device (18.46%), and the device with an active area of 1 cm2 achieves a PCE as high as 17.38%. Furthermore, the unencapsulated NH4PF6-modified PSCs show good humidity stability and retain about 80% of the initial PCE after 1080 h aging at the relative humidity (RH) of 35% ± 5%.
- Publication
Rare Metals, 2023, Vol 42, Issue 10, p3399
- ISSN
1001-0521
- Publication type
Article
- DOI
10.1007/s12598-023-02394-x