We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
DETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au–4H-n-SiC (MS) AND Au–Al<sub>2</sub>O<sub>3</sub>–4H-n-SiC (MIS) DEVICES.
- Authors
DEMİR, GÜLÇİN ERSÖZ; YÜCEDAĞ, İBRAHİM
- Abstract
In this study, Au–4H- n -SiC metal–semiconductor (MS) and Au–Al2O3–4H- n -SiC metal–insulator–semiconductor (MIS) devices were fabricated to examine the effects on the performance of electronic devices of interfacial insulating materials. In order to determine the dielectric properties, capacitance/conductance–voltage (C / G – V) measurements were realized in a wide range of voltages (− 3.0 V)–(11.0 V). Current–voltage (I – V) measurements to obtain the electric properties were realized at ± 2. 5 V. Moreover, both the energy distributions of surface states ( N ss) and series resistance ( R s) were obtained from the C / G – V data. Obtained results provided that series resistance originating from interfacial layer (Al2O 3) was more effective on the I – V and C / G – V characteristics which must be taken into account in the calculation of main electrical parameters. The rectification ratio (RR) and shunt resistance ( R sh) of the MIS device were almost 103 times greater than those of the MS structure. Using Al2O3 between Au and 4H- n -SiC also led to an increase in the value of barrier height (BH) and a decrease in the value of ideality factor (n). These results confirmed that Al2O3 layer leads to an increase in the performance of MS device with respect to low values of N ss , reverse saturation current ( I 0) and n and high values of RR, R sh and BH.
- Subjects
ELECTRIC measurements; ELECTRIC properties; SURFACE states; INSULATING materials; DIELECTRIC properties; DIELECTRIC measurements
- Publication
Surface Review & Letters, 2021, Vol 28, Issue 05, pN.PAG
- ISSN
0218-625X
- Publication type
Article
- DOI
10.1142/S0218625X21500360