The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate 'defects' formed by a focused beam of Ga ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (μm) can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.