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- Title
Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system.
- Authors
Mikhailova, M. P.; Moiseev, K. D.; Voronina, T. I.; Lagunova, T. S.; Yakovlev, Yu. P.
- Abstract
Conditions for the transition from the staggered heterojunction to the type-II broken-gap one were considered for isolated Ga1− x InxAsySb1− y /InAs(GaSb) heterostructures in relation to the quaternary alloy composition. Energy-band diagrams of such heterojunctions were estimated and energy band offsets Δ at the heterointerface were determined. It was experimentally found that the type-II broken-gap heterojunction in the Ga1− x InxAsySb1− y / p-InAs structure is observed in the entire range of composition parameters under study, 0.03 < x < 0.23, and becomes staggered in the range 0.3 < x < 1. In p-Ga1− x InxAsySb1− y / p-GaSb heterostructures with the indium content 0.85 < x < 0.92 in the solid phase, the p-type conductivity is observed, which is indicative of the staggered heterojunction. At x > 0.92, the contribution of electrons of the semimetal channel at the heterointerface to the total conductivity was observed, as well as the transition from the staggered heterojunction to the type-II broken-gap one.
- Subjects
HETEROJUNCTIONS; GALLIUM arsenide semiconductors; INDIUM arsenide; CHROMIUM-cobalt-nickel-molybdenum alloys; ENERGY bands; SOLID state electronics
- Publication
Semiconductors, 2007, Vol 41, Issue 2, p161
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782607020091