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- Title
Impact of Ni Concentration on the Performance of Ni Silicide/HfO/TiN Resistive RAM (RRAM) Cells.
- Authors
Chen, Z.X.; Fang, Z.; Wang, Y.; Yang, Y.; Kamath, A.; Wang, X.P.; Singh, N.; Lo, G.-Q.; Kwong, D.-L.; Wu, Y.H.
- Abstract
We present a study of Ni silicide as the bottom electrode in HfO-based resistive random-access memory cells. Various silicidation conditions were used for each device, yielding different Ni concentrations within the electrode. A higher concentration of Ni in the bottom electrode was found to cause a parasitic SET operation during certain RESET operation cycles, being attributed to field-assisted Ni cation migration creating a Ni filament. As such, the RESET is affected unless an appropriate RESET voltage is used. Bottom electrodes with lower concentrations of Ni were able to switch at ultralow currents (RESET current <1 nA) by using a low compliance current (<500 nA). The low current is attributed to the tunneling barrier formed by the native SiO at the Ni silicide/HfO interface.
- Subjects
SILICIDES; ELECTRODES; MAGNETIC memory (Computers); NICKEL compounds; CATIONS
- Publication
Journal of Electronic Materials, 2014, Vol 43, Issue 11, p4193
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3309-9