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- Title
Long-Term Structural Instabilities in Undoped and Nitrogen-Doped GeSbTe Films.
- Authors
Kim, Ki-Hong; Yun, Dong-Jin; Kyoung, Yong-Koo; Yu, Da-Eun; Choi, Sang-Jun
- Abstract
We investigated the compositional, microstructural, and electrical properties of undoped and nitrogen-doped GeSbTe films subjected to long-term thermal annealing under air atmosphere. Considering the absence of chemical and structural changes, the sheet resistances of samples annealed at 200°C may potentially be related to changes in the lattice parameters. The disappearance of Ge-N bonds and decrease of Ge and N concentrations in samples treated at 300°C were found to depend on the cubic to hexagonal phase transition.
- Subjects
NITROGEN; PHASE transitions; ELECTRON beam annealing; LATTICE constants; ELECTRIC properties
- Publication
Journal of Electronic Materials, 2014, Vol 43, Issue 9, p3082
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3221-3