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- Title
Electroforming-free TaOx memristors using focused ion beam irradiations.
- Authors
Pacheco, J. L.; Perry, D. L.; Hughart, D. R.; Marinella, M.; Bielejec, E.
- Abstract
We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer-level fabrication of fully formed operational memristors.
- Subjects
ELECTROFORMING; IRRADIATION; MEMRISTORS; ION beams; COMPLEMENTARY metal oxide semiconductors
- Publication
Applied Physics A: Materials Science & Processing, 2018, Vol 124, Issue 9, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-018-2041-3