We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Band alignments of O-based and HO-based amorphous LaAlO films on silicon by atomic layer deposition.
- Authors
Zhao, Lu; Liu, Hongxia; Wang, Xing; Feng, Xingyao; Fei, Chenxi
- Abstract
Amorphous LaAlO films were grown on p-type Si substrate by atomic layer deposition using O and HO as the oxygen source, respectively. Band alignments of LaAlO films were analyzed by X-ray photoelectron spectroscopy measurements using the photoemission-based method. Extra hydroxyl groups and C and N-related impurities were detected in the HO-based LaAlO film. As a result, the O-based LaAlO dielectric gains higher band gap and band offsets than those of the HO-based dielectric. Consequently, for the O-based film, the leakage current of more than one order of magnitude less than that of HO-based LaAlO film was obtained. All the results indicate that O is a more appropriate oxidant for the deposition of LaAlO dielectric.
- Subjects
AMORPHOUS semiconductors; X-ray photoelectron spectroscopy; DIELECTRIC films; ATOMIC layer deposition; BAND gaps
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 1, p803
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-5593-z